JPH0534837B2 - - Google Patents

Info

Publication number
JPH0534837B2
JPH0534837B2 JP58081124A JP8112483A JPH0534837B2 JP H0534837 B2 JPH0534837 B2 JP H0534837B2 JP 58081124 A JP58081124 A JP 58081124A JP 8112483 A JP8112483 A JP 8112483A JP H0534837 B2 JPH0534837 B2 JP H0534837B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
thin film
thickness
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58081124A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59205761A (ja
Inventor
Toshimoto Kodaira
Hiroyuki Ooshima
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP58081124A priority Critical patent/JPS59205761A/ja
Publication of JPS59205761A publication Critical patent/JPS59205761A/ja
Publication of JPH0534837B2 publication Critical patent/JPH0534837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP58081124A 1983-05-10 1983-05-10 半導体装置の製造方法 Granted JPS59205761A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58081124A JPS59205761A (ja) 1983-05-10 1983-05-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58081124A JPS59205761A (ja) 1983-05-10 1983-05-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59205761A JPS59205761A (ja) 1984-11-21
JPH0534837B2 true JPH0534837B2 (en]) 1993-05-25

Family

ID=13737637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58081124A Granted JPS59205761A (ja) 1983-05-10 1983-05-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59205761A (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136260A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法
JPH07120805B2 (ja) * 1987-10-12 1995-12-20 日本電気株式会社 半導体装置およびその製造方法
US6337232B1 (en) 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891678A (ja) * 1981-11-27 1983-05-31 Nec Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS59205761A (ja) 1984-11-21

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